Macom To Show GaN Products At EDICON China
Includes cutting-edge GaN-on-Si 60W average power Doherty module and GaN-on-Si devices for RF energy
Macom Technology will show its broad high-performance RF portfolio, including MMICs, diodes, AlGaAs switches, power amplifiers, FEMs and GaN devices, at EDICON China 2019, April 1st -3rd, in Beijing, China.
Macom's booth will feature new product solutions designed for 5G connectivity, wireless basestations, radar, test and measurement, industrial, scientific and medical RF applications. Devices on show will include cutting-edge GaN-on-Si 60W average power Doherty module for wireless basestations; and a range of GaN-on-Si devices for RF energy.
Macom experts will also participate in various events during EDICON, including the 'State of GaN' Technology Panel with Macom's Echo Cheng on the April 2nd, 2:35-4:00 PM. In this panel, semiconductor foundry and device manufacturers will review and debate the state of GaN manufacturing, covering topics such as reliability, advanced heat dissipation techniques, new packing innovations, Si versus SiC substrates, mmWave GaN devices, the use of GaN for various device types and the state of GaN semiconductor production in China.