Wall-charger Teardown report reveals GaN-on-sapphire HEMT
Power Integrations' SC1933C chip: the first GaN-on-Sapphire HEMT to be integrated into a commercially-available device
According to a new report by System Plus Consulting, a specialist in tech and cost analysis of electronic components and systems, the first GaN-on-Sapphire die has been integrated into a commercially-available device; the Wall-Charger PowerPort Atom PD1: A2017 from Anker.
The teardown report from System Plus Consulting reveals that the GaN HEMT device is in Power Integrations' SC1933C chip which also includes primary-side and secondary-side controllers.
That the GaN HEMT was processed on a sapphire substrate is said to be a major breakthrough, as most other power GaN HEMTs are generally processed on silicon substrates.
The report presents a deep teardown analysis of the SC1933C with detailed optical and Scanning Electron Microscope pictures and cross-sections with energy-dispersive X-ray analysis.
The 'GaN-on-Sapphire HEMT Power IC by Power Integrations' report (available from Research and Markets) also provides an estimation of the production costs of the ICs, the HEMT and the package as well as the estimated selling price of the component. Finally, the report includes a comparison with the GaN-on-silicon HEMT from Navitas.
