News Article

JEDEC Publishes Guidelines For SiC Power Conversion Devices

News

Guidelines address the topic of accurately measuring the threshold voltage of SiC MOSFETs

JEDEC Solid State Technology Association has announced the publication of JEP183: Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs.

The publication addresses the critical topic of accurately measuring the threshold voltage (VT) of SiC MOSFETs, addressing the unique behaviour of SiC MOSFETs.

The threshold voltage test methods provided in JEP183 can be used as a common industry guideline for measuring VT of SiC power devices, focused on N-channel vertical structure MOSFET technologies, providing a common baseline for the SiC MOSFET market.

For flexibility, three test methods are offered which may be applied for datasheet, process control, technology development, final tests and other usage. Threshold voltage is a key parameter in the evaluation of changes in the characteristics of physical stimulus such as voltage and/or temperature stress. Without accurately measuring VT, it is not possible to monitor how device characteristics are changed by the stress applied to a device. SiC/SiO2 interface of SiC MOSFET is more complex than the Si/SiO2 interface, which requires careful handling of traps in the device with regard to the change monitoring of characteristics.

“JEP183 recommends approaches for precise and repeatable measurements of SiC MOSFET VT, which will help ensure successful implementation of SiC devices in automotive and industrial markets,” noted Jeffrey Casady, Power Die Product marketing engineering manager, Wolfspeed and the chair of the JC-70.2 subcommittee.

“JEDEC's JC-70 committee is pleased to add JEP183 to its expanding ecosystem of publications. With this first SiC related document we are kicking off a series of guidelines addressing the needs of the industry to work on commonly aligned standards,” said Peter Friedrichs, Vice President SiC, Infineon Technologies, and the vice-chair of the JC-70.2 subcommittee.

CS International to return to Brussels – bigger and better than ever!


The leading global compound semiconductor conference and exhibition will once again bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.


Join us face-to-face between 28th – 29th June 2022

  • View the agenda.
  • 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: PIC International and SSI International.
  • Email info@csinternational.net  or call +44 (0)24 7671 8970 for more details.

*90% of exhibition space has gone - book your booth before it’s too late!

Register


×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
{megaLeaderboard}
X
{normalLeaderboard}
Live Event