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ON Semi Announces New SiC Diodes At PCIM Europe

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Next generation 1200V diodes deliver higher efficiency for power applications

ON Semiconductor introduced new SiC diodes as part of its activities during this year's PCIM Europe Digital Event (3rd to 7th May, 2021).

The automotive AECQ101 and industrial grade qualified next generation 1200 V SiC diodes are for high power applications such as EV charging stations and solar inverters, UPS, EV on board chargers (OBC), and EV DC-DC Converters.

The new design improves on the first generation SiC diodes thanks to a smaller die size and lower capacitance. The NVDSH20120C, NDSH20120C, NVDSH50120C, and NDSH50120C deliver a lower forward voltage drop and a 4x increase in rated current, with a higher rate of change (di/dt) of 3500 A/µs. The smaller die size also returns a 20 percent lower thermal resistance in an F2 package.



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