Loading...
News Article

GaN Systems and ON Semi co-develop PFC Board

News

Bridgeless Totem Pole evaluation board delivers a smaller, more efficient, lower cost power solution

GaN Systems and ON Semiconductor have released a new 300W BTP-PFC Bridgeless Totem Pole Power Factor Correction (PFC) evaluation board.

The board includes ON Semiconductor's NCP1680, the industry's first dedicated critical conduction mode (CrM) bridgeless totem pole PFC controller, and GaN Systems' 650V GS66508B GaN transistors. The NCP1680 controller and GS66508B transistors combine to deliver an innovative cost-effective and high-performing solution in a small footprint.

The solution enables power engineers to evaluate GaN and capitalize on its benefits in improving power system performance. GaN Systems' GS66508B is a 650V, 30A transistor that provides low-loss, high switching frequency, zero reverse recovery, and very low junction-to-case thermal resistance.

The evaluation board allows rapid development of advanced totem pole PFC designs and suitable for various power supply applications for the data center, telecom, industrial, and consumer industries.

On the controller side, this Bridgeless Totem Pole PFC solution leverages the NCP1680, which offers unique features for operation under light load conditions, digital voltage loop compensation, and near unity power factor in all operating modes. Altogether, the solution achieves near 99 percent efficiency, simplifies design, and reduces bill-of-material count and cost.

“Leaders like ON Semiconductor recognise the importance of GaN and are optimizing controllers and creating complementary tools like the new 300W PFC evaluation board we introduced today. These solutions strengthen the GaN industry ecosystem in the goal to make better performing and more cost-effective power electronics," said Jim Witham, CEO at GaN Systems.

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: