Loading...
News Article

EPC announces motor drive board for e-bikes

News

New reference board is a 3-phase BLDC motor drive inverter using the EPC2065 eGaN FET

EPC has announces the availability of the EPC9167, a 3-phase BLDC motor drive inverter reference design board using the EPC2065 eGaN FET. The EPC9167 operates from an input supply voltage between 14 V and 60 V (nominal 48 V) and has two configurations – a standard unit and a high current version:

There are two versions. The EPC9167 standard reference design board is a 3-phase BLDC motor drive inverter board featuring the EPC2065 eGaN FET rated at 3.6 mΩ maximum RDS(on), 80 V maximum device voltage. This standard configuration uses single FETs for each switch position and can deliver up to 20 ARMS maximum output current.

There is also a high current configuration, the EPC9167HC, which uses two paralleled FETs per switch position with the ability to deliver up to 42 Apk (30 ARMS) maximum output current.

Both versions of the EPC9167 contain all the necessary critical function circuits to support a complete motor drive inverter including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate current sense, and protection functions. The boards also feature the ST Microelectronics, STDRIVEG600, smart motor drive GaN half-bridge driver.

The EPC9167 boards measure just 130 mm x 100 mm (including connector). The boards can also be configured for multiphase DC–DC conversion and support both phase and leg shunt current sensing.

Major benefits of a GaN-based motor drive are exhibited with these reference design boards, including lower distortion for lower acoustic noise, lower current ripple for reduced magnetic loss, lower torque ripple for improved precision, and lower filtering for lower cost. The EPC9167 boards’ lower weight and size enable incorporation of the drive into the motor housing and supports low inductance, higher power density motors.

EPC provides full demonstration kits, which include interface boards that connect the inverter board to the controller board development tool for fast prototyping that reduce design cycle times.

The default setting for the GaN-based motor drive kit is 100 kHz switching frequency and 14 ns deadtime. While the kit is designed to be programmed for different frequencies and deadtimes, operation at high frequency around 100 kHz allows for the elimination of electrolytic capacitors and the use of lower capacitance, and reduce the motor losses. Operating the boards with very small low deadtime of around 14 ns allows higher torque per ampere. The joint effect is to improve inverter and motor system efficiency of more than 7% vs. a silicon MOSFET solution which typically operates at 20 kHz and 500 ns deadtime.

“GaN-based inverters increase motor efficiency while reducing their cost and delivering the same performance as an expensive motor using a silicon MOSFET-based inverter”, said Alex Lidow, CEO of EPC. “This enables motor systems that are smaller, lighter, less noisy, have more torque, more range, and greater precision.”

Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: