Loading...
News Article

Teledyne HiRel Space-Screened 650V, 60A GaN HEMT

News

High voltage packaged GaN HEMTs for hi-rel applications now available off the shelf with NASA Level 1 Screening Flow

Teledyne e2v HiRel announces the addition of new space screened versions of its popular 650 V, 60 A high reliability GaN HEMT. The new parts go through NASA Level 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications include battery management, DC-DC converters, and space motor drives.

Two new parts are available, both space-grade, 650 V, enhancement mode, top-side cooled GaN-on-Silicon power transistors. The properties of GaN allow for high current, high voltage breakdown and high switching frequency, enabling high efficiency and high power density designs. The two models are:

Teledyne e2v HiRel’s GaN HEMTs feature single wafer lot traceability, extended temperature performance from -55 to +125degC, and low inductance, low thermal resistance packaging.

“Our GaN HEMT product family has been very popular with customers, and we have had many requests for catalog versions with standard space screening,” said Mont Taylor, VP of business Development for Teledyne e2v HiRel. “Our new 650 V, 60 A parts offer 100 percent screening off-the-shelf, and we can do full level 1 qualification with customer SCDs.”

Both of these new devices are available for ordering and immediate purchase from Teledyne e2v HiRel or an authorized distributor.

Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: