Loading...
News Article

Going Cubic Halves InGaAlN LED Efficiency Droop

News

University of Illinois team shows that switching from polar h- LEDs to c-LEDs quenches efficiency droop from 45 percent to 22 percent

Today, it is widely accepted that the large Auger coefficient is the main cause for the large (~50 percent) efficiency droop in traditional hexagonal-phase InGaAlN LEDs. Yet, this explanation is inadequate to account for the low efficiency droop in GaAs- and GaP-based LEDs, as those have similar Auger coefficients.

In IEEE Trans. Electron Devices, Can Bayram, Jean-Pierre Leburton and Yi-Chia Tsai at the University of Illinois show that the coexistence of strong internal polarisation and large carrier effective mass accounts for ~51 percent of the efficiency droop under high current densities in hexagonal-phase green InGaAlN LEDs (h-LEDs) compared to cubic-phase InGaAlN green LEDs (c- LEDs).

Previously, the efficiency droop reduction in non-polar h-LEDs was attributed to the decrease of carrier leakage from active region, overlooking the interplay between internal polarisation and Auger recombination. Indeed, recent experiments suggest that the efficiency droop reduction in non-polar h-LEDs is in fact due to carrier delocalisation, (a situation different than in polar h-LEDs) that results in stronger electron-hole wave function overlap, lower quantum well carrier densities, and lower Auger recombination rates. The University of Illinois team found out that large carrier effective mass promotes carrier localisation and degrades band-to-band optical transition matrix element.

The graph above shows normalised internal quantum efficiency (IQE) (left y-axis) and efficiency droop (right y-axis) as a function of current density. Red hexagons and green rhombuses refer to the hexagonal-phase (h-) and cubic-phase (c-) InGaAlN LEDs, whereas blue pentagons refer to the non- polar h-LED grown on m-plane GaN substrates.

According to this new interpretation, the researchers show that switching from polar h- LEDs to c-LEDs quenches the efficiency droop from 45 percent to 22 percent (i.e. a 51 percent reduction) thanks to polarisation elimination and effective mass reduction. It is further found that the quantum efficiency of c-LEDs is much immune to the Auger electron-hole asymmetry, the increase of Auger coefficient, and thus efficiency degradation mechanisms. Hence, cubic-phase InGaAlN green LEDs offer an appropriate solution to quench the efficiency droop.

REF

Y.-C. Tsai, J.P. Leburton, C. Bayram, 'Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes,' IEEE Trans. Electron Devices (2022)

Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: