EPC Announces Smallest 40V, 1.1milliΩ FET
GaN FET offers designers smaller, more efficient device than silicon MOSFETs
EPC Corporation has expanded the selection of low voltage, off-the-shelf GaN transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET.
The low losses and small size of the EPC2066 makes it a suitable switch for the secondary side of high power density 40 V - 60 V to 12 V DC-DC converters for the latest servers and artificial intelligence. It is also suitable for the secondary side synchronous rectification to 12V in power supply and silver box data centre servers, and for high density motor drive applications from 24V - 32V.
EPC says that the high frequency operation, high efficiency, and an ultra-small 13.9 mm2 footprint of the GaN FET combine for very high power density.
The EPC2066 is footprint compatible with EPC's prior Generation 4 product, the EPC2024. The Generation 5 improvement in Area x RDS(on) gives the EPC2066 a 27 percent reduction in on-resistance in the same area.
“The EPC2066 is significantly smaller than any other FET in the market at this on resistance”, commented Alex Lidow, EPC's co-founder and CEO. “This part is the perfect compliment to the recently released EPC2071 for LLC DC-DC for high power density computing applications.”
The EPC9174 reference design board is a 1.2 kW, 48 V input to 12 V output LLC converter. It features the EPC2071 for the primary side full bridge and the EPC2066 on the secondary side. The GaN FETs enable 1 MHz switching frequency and 1.2 kW of power in a small 22.9 mm x 58.4 mm x 10 mm size (power density 1472 W/in3). The peak efficiency is 97.3 percent at 550W and the full load efficiency of 96.3 percent at 12 V, delivering 100 A output.