Qorvo wins DoD Advanced RF GaN Program
Qorvo, a provider of RF solutions, has been selected by the U.S. Department of Defense (DoD) to proceed with the Advanced Integration Interconnection and Fabrication Growth for Domestic State of the Art (SOTA) Radio Frequency Gallium Nitride (GaN) program, also known as STARRY NITE, as part of the Office of Undersecretary of Defense Research & Engineering's (OUSD R&E) microelectronics roadmap.
The STARRY NITE program seeks to develop and mature domestic, open SOTA RF GaN foundries in alignment with the DoD advanced packaging ecosystem. The Qorvo team will leverage over 30 years of technology development and a long record of successfully establishing high performance, reliable GaN manufacturing technology to achieve these primary goals:
To offer secure, domestic high-volume manufacturing of 90 nanometer (nm) GaN foundry processes, along with advanced interconnect features that enable high performing, innovative, and compact solutions for next-generation military and commercial wireless communications systems
Qorvo is well-positioned to realize STARRY NITE's vision and ensure accessibility of 90nm RF GaN and 90nm GaN with advanced interconnects across the Defense Industrial Base (DIB), delivering manufacturing maturity with performance and advanced integration features such as copper bumps.
Philip Chesley, president of Qorvo's Infrastructure and Defense Products, said, "Qorvo looks forward to providing best in class advanced GaN technology that will enable high-performing, reliable and compact RF solutions for future needs through the STARRY NITE prototype project."
Qorvo is a leader in providing 5G and other commercial products that require a keen understanding of today's market requirements, as well as the advanced GaN nodes and advanced interconnects needed to support/achieve those requirements. As a commercial provider for dual-use applications, Qorvo is uniquely positioned to leverage wafer volumes to drive manufacturing process control, accelerate process and reliability maturation, and drive down costs for the entire DIB.
The leading global compound semiconductor conference and exhibition will once again bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.
Join us face-to-face on 18-19 April 2023
- View the agenda.
- 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: PIC International and Power Electronics International.
- Email firstname.lastname@example.org or call +44 (0)24 7671 8970 for more details.