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Agnitron Installs custom MOCVD System at Cornell


R&D Ga2O3 machine to drive university’s power device research

Custom MOCVD manufacturer Agnitron Technology of Chanhassen, Minnesota, USA, has successfully installed a custom MOCVD system for growing ultra-wide band gap oxides at Cornell University.

Agnitron installed and qualified the R&D gallium oxide MOCVD Agilis 100 system in July 2022. The system has demonstrated silicon-doped Ga2O3 homoepitaxial layers with room temperature electron mobility of 150 cm2/Vs with a free carrier concentration of 6×1016cm-3. The system has also demonstrated coherently strained epitaxial AlGaO with an aluminium concentration of up to 18 percent on native gallium oxide substrates.

The Agnitron Agilis 100 system at Cornell can perform processes up to 1600 °C substrate temperature. The system has a GEN II remote injection showerhead that provides significantly reduced gas-phase reaction and excellent thickness uniformity on a two-inch diameter wafer. The system's design also supports the use of ozone as an oxidizer.

According to Agnitron, the Agilis 100 MOCVD platform is easily convertible to grow GaN and AlN epitaxial layers, enabling the dual capability on the hardware and control software levels.

Assistant research professor Hari Nair chose Agnitron Agilis 100 for his research on Ga2O3 because the proven platform, used by many other research groups, has demonstrated excellent quality material.

“We look forward to partnering with Agnitron to develop further epitaxial layers of ultra-wide bandgap Ga2O3 and other oxides for forming heterostructures with novel properties," says Nair.

CEO and president Andrei Osinsky says, “Due to the unique fundamental properties of the Ga2O3 semiconductor is attractive for making power switches operating at high-voltage and high-power densities. Because of its great potential for future commercial applications, it is important to continue making further advances in research.”

Osinsky notes that Agnitron Agilis 100 MOCVD has an excellent track record for growing gallium oxides and related alloys that hold world records in material purity and crystal quality. Osinsky says Agnitron is excited to support the new MOCVD at Hari Nair’s lab at Cornell University with their efforts to make advances in epitaxial growth Ga2O3 .

Agnitron has a large installation base of Agilis 100 systems that resulted since it’s introduction in publishing over 30 research papers and delivering many scientific conference presentations.

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