Lakesemi adds 1200V SiC Full Bridge and Rectifier Module
New module has low transient thermal impedance of 0.28°C/W at 1ms for thermal shock
Chinese firm Lakesemi has developed a new generation SiC full bridge with rectifier module — LSCT30PV120B9G.
This new 1200V module is said to have low on-resistance of 88mΩ and a total gate charge of 347nc. Lakesemi says thermal engineers will benefit from its ultra-low transient thermal impedance of 0.28°C/W at 1ms for thermal shock.
Regarding the rectifier, its Repetitive Peak Reverse Voltage reaches 1800V, the Maximum RMS Forward Current is 50A, and Surge Current (@tp=10 ms) is 315A. The rectifier can maintain good stability in complex working environments.
The module's operating temperature range (Ta) is -40 °C to +125 °C, ensuring the use in industry and harsh thermal environments. Its size is 62.8 mm ×56.7 mm × 16.5 mm, allowing it to be used where space is tight.
The module is designed for a wide range of applications including motor drives, switching mode power supply, and UPS.
The leading global compound semiconductor conference and exhibition will once again bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.
Join us face-to-face on 18-19 April 2023
- View the agenda.
- 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: PIC International and Power Electronics International.
- Email info@csinternational.net or call +44 (0)24 7671 8970 for more details.
