Kubos raises USD 2.1m to advance cubic GaN microLEDs for optical interconnects
Kubos will use the funding to accelerate development of cubic GaN microLEDs for high-speed optical interconnects targeting AI and data centre applications.
Kubos Semiconductors has secured more than USD 2.1 million in new funding to accelerate development of its patented cubic gallium nitride (GaN) technology for next-generation microLEDs aimed at high-speed optical interconnects.
The investment includes a Growth Catalyst grant from Innovate UK, matched by funding from the Development Bank of Wales, the Low Carbon Innovation Fund 3 (LCIF3), S4C Digital Media and existing shareholders. The latest round brings Kubos' total funding to more than USD 8 million.
The funded project will investigate the use of cubic GaN microLEDs capable of gigahertz switching speeds while operating at low power, supporting optical communications for AI and data centre infrastructure. The company plans to enter the microLED market within three years through an IP licensing model.
Susan Gormley, CEO of Kubos, said the project complements the company's wider programme to develop high-efficiency microLEDs across the visible spectrum while strengthening its commercialisation roadmap for AI infrastructure, next-generation displays and solid-state lighting.
Based in Cardiff and Cambridge, Kubos is developing cubic GaN materials to improve the performance and manufacturability of microLED devices for emerging photonics applications.
