Mitsubishi Electronics' Highly Efficient, GaAs FET Power Amplifier Enables High-Speed Data and Internet Communications for W-CDMA Cellular Handsets
Features High Power-Added Efficiency of 42 Percent Complies with ITU IMT-2000 Standards
Sunnyvale, CA. Mitsubishi Electronics America s Electronic Device Group today announced a high-efficiency three-stage gallium arsenide (GaAs) field effect transistor (FET) RF power amplifier module for Wideband CDMA (W-CDMA) cellular handset applications for the 1.92- to 1.98-GHz operating range. The amplifier, FA01391, features an extraordinarily high power-added efficiency of 42 percent, combined with a low 3.5-volt operating voltage and low idle drain current (Idq) of only 80 mA (typical) to extend lithium-ion battery life. The device enables high-speed data and Internet communications applications and complies with International Telecommunications Union (ITU) International Mobile Telecommunications-2000 (IMT-2000) standards.
"By offering an unusually high power-added efficiency combined with low-voltage operation and low idle current, Mitsubishi s W-CDMA amplifier is a real power saver for digital cellular handsets," said Bryon Gutow, product marketing manager for microwave/RF products at Mitsubishi Electronics America. "The amplifier s compliance with ITU IMT-2000 standards makes it ideally suited for cellular phones that will be usable anywhere in the world."
The amplifier also maintains 445 mW of output power (26.5 dBm) with an excellent linearity of -38 dBc at ACP5 (adjacent channel leakage power ratio at 5 MHz) and -48 dBc at ACP10 (adjacent channel leakage power ratio at 10 MHz). The device s input/output is internally matched at 50 ohms, which simplifies design by making it unnecessary for developers to develop an external matching circuit.
Packaging, Availability, and Pricing
Mitsubishi s FA01391 GaAs FET RF amplifier module is available in a metal capped, glass-ceramic package that occupies a 7-mm x 7-mm x 1.7-mm footprint. Samples will be available in July 2000 with volume production scheduled for 2001. Pricing will be $6 each in 10,000-unit quantities.
About Mitsubishi Electric and Mitsubishi Electronics America
Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise and high-power communications applications, including satellite and terrestrial transmitters and receivers, marine and vehicular mobile radios, cellular phones and subscriber units. The company produces gallium arsenide (GaAs) FETs, MICs, MMICs and HEMTs; silicon RF power transistors and modules; and surface acoustic wave (SAW) filters for the industrial and consumer markets. Mitsubishi markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electronics America.
Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electronics America Inc., are world-class suppliers of semiconductors and electronic products for computers, communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including embedded DRAM/flash/SRAM, ASIC, ASSP, MCU, discrete memory, graphics, microwave/RF, optoelectronic, storage, and flat-panel display products.
Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.
Keywords
Mitsubishi, GaAs FET, power amplifier, W-CDMA, microwave.
Contact:
Mitsubishi Electronics America Inc.
John Garner
Tel: 408/774-3191
garner_john@edg.mea.com
Mitsubishi Electronics America Inc.
John Garner
Tel: 408/774-3191
garner_john@edg.mea.com
E-mail: garner_john@edg.mea.com
Web site: http://www.mitsubishichips.com/
