Toshiba Extends Its Line-up of RF GaAs HBT Power Amplifiers for CDMA Applications

New MMIC Provides High Output Power, Gain and Efficiency, Making it an Ideal Solution for 900 MHz Cellular and Cordless Phone Handset Designs

BOSTON, MA. Toshiba America Electronic Components, Inc. (TAEC) today announced its new RF gallium arsenide (GaAs) hetero-junction bipolar transistor (HBT) microwave monolithic integrated circuit (MMIC) power amplifier.

Designated the TG2011F, this RF power amplifier is designed for use in the 900 megaherz (MHz) band of cellular and cordless phone circuitry. The TG2011F provides an ideal solution for phone handset applications using the widely used Code Division Multiple Access (CDMA) standard.

The TG2011F offers high output power (Po) of 27dBmW, high power gain of 28dB, and a single power supply of 3.4 volts (V). With high total efficiency of 34 percent, the new GaAs HBT power amplifier features a low level of power consumption, which ultimately results in longer talk time for phone handset users.

A GaAs HBT power amplifier with a bias circuit, the TG2011F provides better linearity than a silicon device, enabling design engineers to achieve high output power for a wide range of input power levels. While the device provides a high power, low noise signal for transmission, the small package (5.3 x 6.4millimeters (mm)) gives engineers the flexibility to create smaller handset designs to meet growing consumer demand.

An exclusive feature of Toshiba s TG2011F is the internal gain control amplifier, which prevents the final stage of the power amplifier from going into overdrive, thereby reducing the likelihood of damage to the device. In addition, Toshiba s unique temperature compensation circuit prevents the final stage of the power amplifier from breaking down due to overheating. These features enable Toshiba to lower system and manufacturing costs by simplifying the design process and reducing the number of parts.

"Toshiba is committed to maintaining our position as a leading global provider of advanced RF solutions as demonstrated by our expanded line-up of GaAs HBT power amplifiers," said Ed Monzon, senior business development manager, Toshiba s Microwave and RF Business Unit. "Toshiba is introducing our new RF power amplifier in response to increased demand within the design engineering community for high-quality, cost-effective RF solutions for cellular and cordless phone handset applications, which represent a rapidly growing segment of the wireless communications market."

Dataquest forecasts that worldwide production of 900 MHz digital cordless telephone handsets will increase from approximately 20 million units in 2000 to almost 38 million in 2003 (Source: Dataquest s "Cordless Telephone Application Markets: 1999/Industry Trends" Report, January 3, 2000). Given this industry trend, Toshiba is expanding its offering of GaAs HBT power amplifiers to compete more effectively in this growing market area.

Packaging

The TG2011F is housed in a 20-pin high-power, small outline package (HSOP), which measures 5.3 x 6.4mm. A thin, flat package type, the HSOP20 is ideally suited to support the industry trend toward smaller, thinner cellular and cordless phone handset designs.

RF Power Amplifier Product Specifications:

Part Output Power Collector Process Packaging Number Power (Po) Gain (Gp) Efficiency ---------------------------------------------------------------------------------------------------- TG2011F 27dBmW 28dB 34% GaAs HBT HSOP20 Pricing and Availability

Samples of Toshiba s TG2011F RF power amplifier device are available now, priced at $4.50 each in 1,000 piece quantities. Volume production is scheduled to begin in fourth quarter of this year, at which time production pricing will become available.

About Toshiba

Toshiba America Electronic Components, Inc. (TAEC) is the North American engineering, manufacturing, marketing and sales arm of Toshiba Semiconductor Company and Display Devices and Components Company. Toshiba s Semiconductor Company is one of the world s leading manufacturers and suppliers of semiconductor products including LSIs, microprocessors and controllers, and advanced memory products, in addition to discrete and bipolar components. Toshiba is recognized as one of the world s largest suppliers of semiconductor, electronic component and storage solutions. The company is also responsible for global sales and marketing of other major electronic components including liquid crystal displays, color display and picture tubes, lithium-ion and other secondary batteries. For additional information, please visit TAEC s web site at http://www.toshiba.com/taec. Editor s Note: Reader inquiries please publish 800/879-4963, ext. 231

Contact: Toshiba America Electronic Components, Inc. Lisa Nemec, 949/455-2293 (not for reader inquiries) lisa_nemec@taec.toshiba.com For reader inquiries publish 800/879-4963 ext. 231 or Benjamin Group/BSMG Worldwide Penny Capra or Kim Buckley, 949/260-1300 penny_capra@benjamingroup.com kim_buckley@benjamingroup.com