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News Article

Mitsubishi Electronics Announces New Higher Gain, Leadless, Surface-Mount HEMTs for Low-Noise Amplifiers

New HEMTs Boost Gain by 1.5 dB; Offer Outstanding Noise Figures as Low as 0.40 dB

BOSTON, MA (IEEE MTT-S International Microwave Symposium). Mitsubishi Electronics America s Electronic Device Group today announced two new additions to its low-noise HEMT (high electron mobility transistor) family that boost gain by 1.5 dB at frequencies through K band, compared to Mitsubishi s previous-generation low-noise HEMTs. The MGF4953A low-noise HEMT targets the first stage of low-noise amplifier applications with its 13.5-dB typical associated gain and 0.40-dB typical noise figure at 12 GHz. The second and following stages are well served by the MGF4954A low-noise HEMT, featuring the same high gain but with a slightly relaxed noise figure of 0.60 dB.

The new devices are packaged in leadless, surface-mount ceramic packages that measure just 2.15 mm square by 0.80 mm high and are packed in tape-and-reel format for use with automated assembly equipment.

For complete datasheets, please check the Mitsubishi Electric Semiconductor Group website (http://www.mitsubishichips.com/microwave).

Availability and Pricing

The MGF4953A and MGF4954A low-noise HEMTs are now in volume production, with pricing at $2.00 each and $1.60 each, respectively, in 5,000-unit quantities.

About Mitsubishi Electric and Mitsubishi Electronics America

Mitsubishi Electric Corporation manufactures a diverse range of microwave and RF semiconductors for linear, low-noise and high-power communications applications, including satellite and terrestrial transmitters and receivers, marine and vehicular mobile radios, cellular phones and subscriber units. The company produces gallium arsenide (GaAs) FETs, MICs, MMICs and HEMTs; silicon RF power transistors and modules; and surface acoustic wave (SAW) filters for the industrial and consumer markets. Mitsubishi markets its microwave and RF semiconductors in North America through the Electronic Device Group of Mitsubishi Electronics America.

Mitsubishi Electric Corporation and its North American affiliate, Mitsubishi Electronics America Inc., are world-class suppliers of semiconductors and electronic products for computers, communications, industrial, Internet-enabled, automotive, and visual applications. Mitsubishi combines its systems-level expertise and high-level silicon process technologies to provide chip, chipset and system-on-chip solutions. The company is ranked among the top-tier worldwide semiconductor suppliers and offers an extensive range of semiconductor and computer system components for the North American marketplace, including embedded DRAM/flash/SRAM, ASIC, ASSP, MCU, discrete memory, graphics, microwave/RF, optoelectronic, storage, and flat-panel display products. Additional information on the Mitsubishi Electric Semiconductor Group is available at http://www.mitsubishichips.com/.

Keywords

Mitsubishi, microwave, RF, semiconductor, HEMT, GaAs, FET, electronics, amplifier, LNA, LNB, low noise, noise figure, NF, gain, DSS, DBS, TVRO, receiver, telecom, transistor, field effect transistor, aerospace, telecom, high frequency.

Contact: Mitsubishi Electronics America Inc. John Garner Tel: 408/774-3191 garner_john@edg.mea.com

 

Mitsubishi Electronics America Inc.
John Garner
Tel: 408/774-3191
garner_john@edg.mea.com
 
E-mail: garner_john@edg.mea.com
Web site: http://www.mitsubishichips.com/
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