Cree Announces Shipments of Model CRF-20010 Radio Frequency (RF) Devices And Evaluation Kits
Company Introduces Expanded Product Family at IEEE Microwave Symposium
DURHAM, N.C. At the IEEE International Microwave Symposium in Boston (June 13-15) Cree, Inc. (Nasdaq: CREE) announced it has introduced three new radio frequency (RF) products designed for wireless and broadcast applications based on the same silicon carbide (SiC) technology used in the Model CRF-20010. In addition, Cree has launched shipment in limited quantities to customers in the United States, Europe and Asia of its 10-watt, SiC metal-semiconductor field-effect transistor (MESFET), Model CRF-20010, and related evaluation kits, Model CRF-20010-TB. Potential customer applications include wireless base stations up to 2.2 GHz; multi-channel multi-point distribution systems (MMDS) at 2.5 to 2.7 GHz, including infrastructure equipment and home-based applications; wireless local loop systems (WLL) at 3.5 to 3.7 GHz; as well as radar and other applications. These initial shipments are expected to provide minimal revenue during the first half of fiscal year 2001.
The evaluation kits, Model CRF-20010-TB, include a RF circuit and five power transistors for use in a number of applications such as PCS, 3G, W-CDMA, MMDS and WLL. The three new RF products include Model CRF-27010, a packaged SiC transistor for MMDS; Model CRF-37010, a packaged SiC transistor, for WLL applications; and Model CRF-05003, a self-biased amplifier operating at 28 volts, offered as a complete "drop-in" packaged amplifier solution with a typical gain of 10 dB for general-purpose applications.
Ray Pengelly, General Manager of RF Products, stated, "These SiC MESFETs operating at 48 volts possess superior characteristics compared to either gallium arsenide (GaAs) or silicon (Si) transistors. The improved parameters include higher operating temperatures and higher efficiencies in converting DC voltage to RF power, and are expected to provide lower distortion when used in applications such as the latest multi-carrier telephone channel systems. Other advantages of these SiC devices include a higher break-down voltage, higher saturated electron drift velocity, and higher thermal conductivity. We believe SiC MESFETs offer greater power density and increased reliability compared to Si and GaAs transistors used in similar applications."
North Carolina-based Cree, Inc. is the world leader in developing and manufacturing semiconductor materials and electronic devices made from silicon carbide. The company uses proprietary technology to make enabling compound semiconductors such as blue and green LEDs, microwave transistors for use in wireless base stations and radar, SiC crystals used in the production of unique gemstones and SiC wafers that are sold for research and production. Cree has new product initiatives based on its experience in SiC, including blue laser diodes for optical storage applications and high power devices for power conditioning and switching. For more information on Cree, visit http://www.cree.com.
This press release contains forward-looking statements involving risks and uncertainties that may cause actual results to differ materially from those indicated. Actual results could differ due to a number of factors, including the possibility the company may encounter technological and manufacturing difficulties and experience production delays and increased costs as a result; the possibility the company will be unable to manufacture the products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the potential lack of customer acceptance of the products; and other factors discussed in the company s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 27, 1999, subsequent quarterly reports and its registration statement on Form S-3 filed January 3, 2000, as subsequently amended.
SOURCE Cree, Inc.
CONTACT: Fran Barsky, Investor Relations Manager of Cree, Inc., 919-313-5397, or fax, 919-313-5452
Web site: http://www.cree.com (CREE)
Fran Barsky, Investor Relations Manager of Cree, Inc.,
919-313-5397, or fax, 919-313-5452
Web site: http://www.cree.com (CREE)
Web site: http://www.cree.com
