TriQuint Semiconductor Introduces Two High Power Amplifier MMICs for the Broadband Wireless Market

Source: TriQuint

These One Watt, Millimeter Wave Parts are Applicable for LMDS, Digital Radio Communications and SatCom Use

HILLSBORO, Ore. TriQuint Semiconductor, Inc. (Nasdaq:TQNT - news) announces the introduction of two millimeter-wave, high power amplifier MMIC products covering the 18 to 32 GHz frequency band.

Through the use of advanced 0.25-micron gate length pHEMT GaAs production process technology, these devices both provide the smallest available physical size per watt output power and lowest costs per watt of output power in this frequency range.

These devices, designated the TGA1135B and TGA1172, provide equipment designers with an efficient, one-watt source of millimeter wave power for use in wireless communications products such as point-to-point or point-to-multipoint radios, satellite communication earth stations, and spacecraft payloads. Frequency bands covered include the 18, 23, and 26 GHz microwave radio bands, 24, 28 and 31 GHz Local Multipoint Distribution System (LMDS) bands, as well as the 18 and 30 GHz (Ka-Band) satellite communications bands.

``These devices represent the state of the art in power per square millimeter of device area. The combination of extremely compact device size coupled with TriQuint s high yield, 0.25 micron power pHEMT process allows the most competitive pricing in the industry and will enable our customers to compete successfully in the fast growing broadband wireless marketplace, said Dan Green, TriQuint s Microwave/Millimeter Wave Division Standard Product Manager.

PERFORMANCE & APPLICATIONS

The two devices are fabricated on TriQuint s 0.25-micron gate length, production power pHEMT process. TriQuint s power pHEMT process produces high frequency device performance comparable to that normally associated with 0.15-micron gate length devices while providing high device yields of a mature production process. In addition to the high gain and power levels which the short gate lengths provide, the pHEMT structure allows for reduced intermodulation distortion over devices fabricated with other process technologies.

The TGA1135B is a two-stage amplifier providing one watt of output power (at the 1dB compression point) and 14 dB of small signal gain. The output third order intermodulation intercept point (OTOI) is +37 dBm. Its frequency range of 18 to 27.5 GHz makes is suitable for SatCom and terrestrial digital radio applications. The MMIC also offers an on-chip power detector for output power level monitoring. Excellent input and output return losses (15 dB) allow use with no external RF matching circuitry.

The TGA1172 amplifier is a three-stage design providing 0.8 watt of output power (at the 1dB compression point) and 18 dB of small signal gain. The output third order intermodulation intercept point is +37 dBm. LMDS, SatCom, and terrestrial broadband radio applications are appropriate for this device. Input and output return losses are typically 10 dB. The TGA1135B and TGA1172 draw 460mA and 630mA respectively from a +5V to +7V supply. Both devices require a separate negative voltage supply for gate biasing.

PACKAGE

The TGA1135B and TGA1172 are offered in chip form. Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attachment methods as well as with thermocompression and thermosonic wire bonding. Each chip is 100% DC and RF tested on-wafer to ensure performance compliance.

PRICE AND DELIVERY

In 1,000 piece quantities, the TGA1135B is priced at $49.00 and the TGA1172 is priced at $50.00. Engineering quantities are available from stock. Production quantities are available within 12 weeks AAO.

SUPPORT

Technical support is available along with data sheets and application notes. The TGA1135B and TGA1172 data sheets are available on TriQuint s website in pdf format (http://www.triquint.com/MMW/tga1135/tga1135b.pdf and www.triquint.com/MMW/tga1172/tga1172.pdf) and on our fax-back service at 888/653-6116, item numbers 651 and 652 respectively.

This press release contains both historical information and forward-looking information. Numerous important factors affect the Company s operating results and could cause the Company s actual results to differ materially from the results indicated in this press release or in any other forward-looking statements made by, or on behalf of, the Company, and there can be no assurance that future results will meet expectations. Results could differ materially based on various factors, including the Company s performance and market conditions. Additional considerations and important risk factors are described in the Company s filings with the Securities and Exchange Commission, copies of which are available on request from the Company.

TriQuint Semiconductor, Inc. (Nasdaq:TQNT - news) is a leading worldwide supplier of a broad range of high performance gallium arsenide (GaAs) integrated circuits. TriQuint s products span the RF and millimeter wave frequency ranges and employ analog and mixed signal circuit designs. They are used in wireless communications, telecommunications, data communications and aerospace systems. TriQuint offers both standard and customer specific products as well as foundry services. TriQuint s two operations, in Oregon and Texas, are both certified to the ISO 9001 international quality standard.

TriQuint is headquartered at 2300 NE Brookwood Parkway, Hillsboro, OR 97124 and can be reached at 503/615-9000 (fax 503/615-8900). Visit the TriQuint website at http://www.triquint.com.

Contact:

TriQuint Semiconductor, Inc. Standard Products Manager Dan Green, 972/994-8575, Fax, 972/994-8504, dgreen@tqtx.com

Dir. Strategic Marketing & Communications Rob Hamilton, 503/615-9407, Fax, 503/615-8901, rhamilton@tqs.com