Fujitsu Compound Semiconductor, Inc. Announces the expansion of their GaAs MMIC Power Amplifier Product Line
Source: Fujitsu Compound Semiconductor, Inc.
FCSI is introducing four new millimeter-wave, high power MMIC amplifier products covering the 17.5 to 31.5 GHz frequency band with output power ranging between 26 to 31 dBm. These new devices are designed for point-to-point or point-to-multipoint radio link and Local Multipoint Distribution System (LMDS) applications. With the use of our 0.25 mm gate length PHEMT process technology and input/output 50-ohm matching, these devices ease the customer s design implementation.
The FMM5803X is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 27.5 to 31.5 GHz frequency range with a 30dBm output, a 12/14 dB power gain, and a 20% Nadd. The FMM5805X is a high-gain, high power, 3-stage MMIC amplifier designed for operation in the 17.5-20.0 GHz frequency range with a 31 dBm output, a 21 dB power gain, and a 30% Nadd. The FMM5806X is a high-gain, wide band 2-stage MMIC amplifier designed for operation in the 24.0-27.0 GHz frequency range with a 26 dBm output, a 9.5 dB power gain, and a 25% Nadd. The FMM5807X is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 21-27 GHz frequency range with a 29/30 dBm output, a 14 dB power gain, and a 20% Nadd.
Fujitsu P/N Primary Application Freq.(GHz) OutputPower(Typ.) Power Gain(Typ.) Nadd(Typ.) FMM5803X LMDS 27.5~31.5 30.0dBm 12/14dB 20% FMM5805X Point-to-Point Radio 17.5~20.0 31.0dBm 21.0dB 30% FMM5806X mmWave Radio 24.0~27.0 26.0dBm 9.5dB 25% FMM5807X mmWave Radio 21.0~27.0 29/30dBm 14.0dB 20%
FCSI s products include microwave and millimeter wave RF devices for cellular, handset, broadcast and satellite communications. FCSI s products also include products for fiber optic digital telecommunications applications in the 622 Mbs - 40 Gb/s range (laser diodes, receiver modules, GaAs IC s, and LN modulators), and analog lasers for CATV applications (broadcast and return path). FCSI produces lasers at ITU grid wavelengths for DWDM systems.
Fujitsu Quantum Devices, Limited located in the prefecture of Yamanashi, Japan manufactures these products for the North American markets in one of the world s largest compound semiconductor operations. These operations are ISO 9001 and ISO 14001 certified, with support facilities strategically located throughout the world for assembly and test. Fujitsu performs 100% testing to insure quality and reliability. Fujitsu Compound Semiconductor, Inc., headquartered in San Jose, California, is part of the Fujitsu Limited group of companies, and is the North American sales, service and design facility for Compound Semiconductor devices used in the data communications and telecommunications industry. FCSI brings to North American and selected international markets a combination of local engineering and technical support backed by the manufacturing strength of Fujitsu s Japanese and overseas factories. For data information, FCSI s website is located at www.fcsi.fujitsu.com. For sales information, the company can be reached at our San Jose office at (408) 232-9500. We can also be reached through the Internet by e-mail to: sales@fcsi.fujitsu.com or by facsimile at (408) 428-9111.
Contact: Warren Gould Tel: 408-232-9638 wgould@fcsi.fujitsu.com Agnes Toan Tel: 408-232-9514 atoan@fcsi.fujitsu.com
Warren GouldTel: 408-232-9638
wgould@fcsi.fujitsu.com
Agnes Toan
Tel: 408-232-9514
atoan@fcsi.fujitsu.com
E-mail: atoan@fcsi.fujitsu.com
Web site: http://www.fcsi.fujitsu.com
