Microsemi Introduces New InGaAs/InP Photodetectors For 1310nm and 1550nm Fiber Optic Applications

Microsemi Corp. (Nasdaq: MSCC) announced today that it has begun sampling parts from a second family of high speed gallium arsenide photodetectors for fiber optic applications.

Designated the MXP4000 Series, the new indium phosphide-based indium gallium arsenide photo detectors are designed specifically for fiber optic transponder modules and hybrids in the 1310nm to 1550nm spectral range.

The four new devices feature a breakdown voltage of 20 volts, with bandwidth options from 156 Mb/sec to 10Gb/sec. Initially, the MXP4000 series of photodiodes are being offered in die form for manufacturers of photodiode modules, supervisory VCSEL monitoring circuits and combination PIN photodiode-transimpedance amplifier hybrids.

"When we announced our 850nm GaAs photodetectors in September we indicated that our InGaAs/InP detectors would be sampling by the end of the calendar year." stated Lane Jorgensen, vice president and general manager of the optical devices business unit. "As this announcement indicates, we continue to remain on track with development of our gallium arsenide products."

Compound Semiconductor Expertise

The company said it continues to expand its expertise in compound semiconductors with a focus on III-V and II-VI materials. Sampling of the MXP4000 series represents the fourth advanced material product introduced by Microsemi since July 2000.

Commenting on the preliminary product rollout, vice president of marketing and business development, Manuel Lynch stated, "Customers in this niche marketplace are eager to have another supplier to support the rapid growth of optical communication networks. Their interest has been very high during our evaluation of our prototype designs for these applications."

Microsemi indicated that it expects to be in volume production on the MXP4000 series by summer of 2001.

Future Developments

Microsemi also announced that it is in the final design stage of its first InGaP HBT transimpedance amplifier, which will complement its InGaAs/InP detector line. The company expects these samples to be available in March 2001.

Microsemi CEO and president, Jim Peterson commented, "Our aggressive product roadmaps are being met, time and time again. We believe that coupling this gallium arsenide roadmap with our program to add internal GaAs foundry capacity will provide one recipe for success in meeting our corporate growth objectives."

About Microsemi

Microsemi is a leading designer, manufacturer and marketer of analog, mixed-signal and discrete semiconductors. The company s semiconductors manage and regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi products include individual components as well as complete circuit solutions that enhance customer designs by providing battery optimization, reducing size or protecting circuits. Markets the company serves include mobile connectivity, computer/peripherals, telecommunications, medical, industrial/commercial, space/satellite and military. More information may be obtained by contacting the company directly or by visiting its Web site at http://www.microsemi.com.

Editors Note: Please forward reader inquiries to Microsemi Marketing Communications, 11861 Western Avenue, Garden Grove, Calif. 92841-2119.

Investor inquiries: David R. Sonksen, Microsemi Corp., Santa Ana, Calif. -- 714/979-8220; or Sean Collins or William F. Coffin, Coffin Communications, Sherman Oaks, Calif. -- 818/789-0100. "Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in the news release that are not entirely historical and factual in nature are forward-looking statements. For instance, all statements of belief and expectations are forward-looking statements. Forward-looking statements are inherently subject to risks and uncertainties, some of which cannot be predicted or quantified. Potential risks and uncertainties include, but are not limited to, such factors as the difficulties regarding the making of estimates and projections, hiring and retention of qualified technical personnel in a competitive labor market, rapidly changing technology and product obsolescence, the ability to realize cost savings or productivity gains, the ability to improve capacity utilization, potential cost increases, the strength and competitive pricing environment of the marketplace, demand for and acceptance of the company s products, the results of planned development, marketing and promotional campaigns, changes in demand for products, difficulties of foreseeing future demand, effects of limited visibility of future sales, potential non-realization of expected orders or non-realization of backlog, business and economic conditions or adverse changes in current industry conditions, customer order preferences, and fluctuations in market prices of the company s stock, difficulties in implementing company strategies, environmental matters, litigation, difficulties protecting proprietary rights, and inventory obsolescence. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties and risks identified in the company s most recent Form 10-K and subsequent Forms 10-Q, and the final prospectus on Form S-3 filed on June 1, 2000 by the company with the Securities and Exchange Commission. The company does not undertake to supplement or correct any information in this release that is or becomes incorrect.

Contact: Microsemi Corp., Santa Ana David R. Sonksen Tel: 714/979-8220 or Coffin Communications, Sherman Oaks Sean Collins/William F. Coffin Tel: 818/789-0100