UEC announces AlGaAs VCSEL, 1310nm LED and FP LD epiwafers for optic communication
Hsinchu, Taiwan. One of the key AlGaInP high brightness light emitting diode (LED), laser diode (LD) epiwafer and chip manufacturers, United Epitaxy Company, Ltd. (UEC), announced it has successfully developed AlGaAs VCSEL, 1310nm LED and FP LD epiwafers for optical communications applications. The wavelength of the AlGaAs VCSEL epiwafers covers the range from 780 to 850 nm. Both ion-implant and oxide-confined VCSEL epiwafers will be provided.
The 10 um aperature 850nm AlGaAs oxide-confined VCSEL has a threshold current about 1 mA, slope efficiency of 0.3 W/A and resistance about 35 ohms. For 1310 nm FP laser diodes, the 3 um stripe width and 300 um cavity length laser chip made from UEC s epiwafers has a typical threshold current of 12mA, operating current at 5 mW about 25 mA, slope efficiency of 0.37 W/A, and characteristic temperature. To over 85°C. UEC will start mass-production of these epiwafers from July 2001.
With UEC s volume production experience, we can provide not only high quality but also cost, effective epiwafers to fulfill the rapid growth market of data communication.
Contact: Jack Yeh of UEC Tel: 886-3-5678000, ext-2521 Jack@uec.com.tw
Jack Yeh of UECTel: 886-3-5678000, ext-2521
Jack@uec.com.tw
E-mail: Jack@uec.com.tw
