Raytheon RF Components will Supply GaAs HBT Power Amps for New LG Electronics Tri-Mode CDMA Handset.
Source: Raytheon
Andover, MA. As part of a recently concluded high-volume production agreement, Raytheon Company s (NYSE: RTNA; RTNB) RF Components Division (RRFC) will supply LG Electronics Co., LTD with the RMPA 1951 GaAs HBT power amplifier for the handset market. LG Electronics Co., one of the largest wireless telephone manufacturers in Korea, has earmarked the TM910 dual band tri-mode handset for the US CDMA market.
The RMPA 1951 is a small outline power amplifier module designed for personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Among a wide selection of features, the amplifier incorporates an advanced DC power management capability that extends battery life by reducing current consumption without degrading signal quality. Most cellular/PCS handsets can benefit from gain control and DC power management to optimize transmitter performance while operating at backed-off output power levels.
During peak telephone usage, current consumption is lowered by more than 60 percent and small signal gain by up to 10 dB, via the amplifier s single reference control voltage. Even with the amplifier biased for lowest current consumption, high linearity is maintained over the full operating temperature range and at output power levels up to + 16 dBm. The amplifier also achieves a power added efficiency level of 35 percent at an average output power level of +29dBM.
Analog or digital bias control is available using the unit s single reference voltage affording the handset designer greater flexibility. As a result, gain, linearity and power added efficiency can be optimized over a wide range of output power levels, depending on the density profile of the wireless network. This feature is made possible by the inherent performance characteristics of Raytheon s proprietary GaAs HBT process.
Other module features include compact LCC packaging (6.0 X 6.0 X 1.5mm3) and input/output power that is matched to 50 ohms and DC blocked. Data sheets are available for detailed technical information.
With production slated to begin in October, the agreement marks the first in a series of anticipated production orders between RF Components and LG Electronics Co. In making the announcement, Mr. Russell Wagner, RRFC Vice President of Strategic Development, said that the program emphasizes Raytheon s commitment to the wireless marketplace. "We continue to expand the power amplifier family to meet the increasing demands of handset manufacturers", said Mr. Wagner, "This agreement further expands our presence in Asia and demonstrates the value we provide".
Raytheon RF Components is a developer and high volume manufacturer of components for the wireless communications industry. Included among an extensive list of products are GaAs MMICs, transmit and receive modules, and semiconductor devices. Applications include PHEMT and HBT power amplifiers, low noise amplifiers and an emerging portfolio of MHEMT products. Other products include components for wireless base stations, data communications systems, millimeter-wave systems, as well as transmit/receive modules for space-based communication and land based radar systems.
Contact: Brian Reardon Tel: 978 684-8663 Or Pete Lentini Tel: 617 345-0822
Brian Reardon
Tel: 978 684-8663
Or
Pete Lentini
Tel: 617 345-0822
