Agilent Technologies Introduces Industry's Smallest Single-voltage, Enhancement Mode E-pHEMT GaAs FET
Device Considered Ideal for 3-volt High Linearity and Higher Frequency Design
Palo Alto, CA. Agilent Technologies Inc. (NYSE: A) today announced that it has introduced the Agilent ATF-541M4, the industry s smallest single-voltage E-pHEMT(1) GaAs FET(2). The Agilent ATF-541M4 miniature leadless package measures only 1.4 mm x 1.2 mm x 0.7 mm and takes up 60% less board space than the conventional SC-70 package (2.1 mm x 2.0 mm x 0.9 mm). The device s small size, low noise and high linearity makes it highly suitable for tower-mounted amplifiers and front-end LNAs or hybrid modules for GSM/TDMA/CDMA/W-CDMA base stations operating at 900 MHz and 1.9 GHz.
Typical performance at 2 GHz (3 V, 60 mA) is 0.5 dB noise figure, +35.8 dBm OIP3, +21.4 dBm P1dB and 17.5 dB associated gain. At 5.8 GHz (3 V, 60 mA) the numbers are 1.2 dB Fmin, +37.6 dBm OIP3, +19.4 dBm P1dB and 11.9 dB associated gain.
Agilent s E-pHEMT enhancement mode devices are the first commercially available single-supply GaAs transistors that do not need a negative gate bias voltage for operation. They can help simplify the design and reduce the cost of receivers and transmitters in many applications in the 450 MHz to 6 GHz frequency range.
Both the ATF-541M4 and its SC-70-packaged counterpart the ATF-54143 exhibit superior linearity, P1dB and NF performance at higher frequencies, especially notable in the 5 GHz to 6 GHz frequency range. Both can operate effectively as a driver amplifier for 5 GHz 802.11a and HiperLAN/2 Wireless LAN network interface cards. Since they are designed for optimal RF performance at 3 V, they are suitable for operation in PCMCIA-standard PC cards for laptop and handheld computers.
U.S. Pricing and Availability Agilent s ATF-541M4 E-pHEMT device is priced at $2.18/piece in 10,000- to 24,999-piece quantities. It is supplied in bulk (100 units per antistatic bag), or tape-and-reel with 3,000 devices on a 7-inch reel, and 10,000 devices on a 12-inch reel. Delivery is from stock. Further information on Agilent s RF semiconductor products is available on the Web at www.agilent.com/view/rf.
About E-pHEMT E-pHEMT is a semiconductor process optimized for wireless applications. All other gallium arsenide (GaAs), metal-semiconductor field effect transistor (MESFET) and high-electron-mobility transistor (HEMT) devices operate from a positive voltage supply, but need a negative gate voltage to control them. The components to provide the negative voltage supply increase system cost, take up valuable board space and require extra design effort. E-pHEMT technology requires only a single positive voltage supply.
In addition to the ATF-541M4 and previously introduced ATF-54143 and ATF-55143 devices in the SC-70 package, Agilent is also using this new process to develop a line of power modules for GSM and CDMA handset applications.
About Agilent Technologies Agilent Technologies Inc. (NYSE: A) is a global technology leader in communications, electronics and life sciences. The company s 43,000 employees serve customers in more than 120 countries. Agilent had net revenue of $9.4 billion in fiscal year 2000, as restated to reflect the sale of its healthcare business. Information about Agilent is available on the Web at www.agilent.com.
Contact: Agilent Technologies Mark Alden Tel: 408/654-8741 mark_alden@agilent.com
Agilent TechnologiesMark Alden
Tel: 408/654-8741
mark_alden@agilent.com
E-mail: mark_alden@agilent.com
Web site: http://www.agilent.com