Uniroyal Technology Corporation Announces New 3-Inch Silicon Carbide Substrate Developed By Sterling Semiconductor
SARASOTA, Fla., Sterling Semiconductor, Inc., a subsidiary of Uniroyal Technology Corporation (Nasdaq: UTCI - news), announced today that it will begin customer sampling of its new 3-inch diameter silicon carbide (SiC) substrate. Sterling will introduce the substrates at the International Conference on Silicon Carbide and Related Materials (ICSCRM) in Tskuba, Japan next week.
Sterling is a leading producer of SiC substrates used to make advanced semiconductor devices for applications such as wireless communications, industrial process control, and power electronics. SiC is best suited for applications that require performance levels exceeding those of silicon and gallium arsenide-based electronic devices. Currently, silicon carbide substrates available in the market are 2 inches in diameter. The expansion to 3-inch substrates will provide increased yields and greater cost efficiencies for electronic device manufacturers.
The 3-inch wafer represents an important milestone in Sterling s substrate development effort, said Robert L. Soran, President and Chief Operating Officer, Uniroyal Technology Corporation. Larger substrate size is key to reducing silicon carbide device costs and gaining acceptance in the mainstream semiconductor marketplace. Moreover, the production of silicon carbide substrates is a very difficult technology to master, and the 3-inch product gives Sterling a significant technological advantage. Our technical team has made excellent progress in expanding wafer size and we are continuing this effort.
The new 3-inch substrates that will be sampled with customers are of the 6H polytype, conducting material. Sterling plans to continue its wafer expansion efforts with the development of 3-inch diameter 4H polytype conducting substrates and semi-insulating substrates.
Uniroyal Technology s Compound Semiconductors & Optoelectronics business segment includes Uniroyal Optoelectronics, LLC, Sterling Semiconductor, Inc., and NorLux Corp. Uniroyal Optoelectronics manufactures high brightness light emitting diodes (HB-LEDs), a rapidly growing market with applications such as traffic signals, indoor/outdoor signage and automotive applications. Brand names include POWER-Ga(i)N™ and POWER-BR(ite)™. Sterling Semiconductor is a leading producer of silicon carbide (SiC) substrates, epitaxial thin films on SiC substrates and is developing SiC devices for wireless communications, industrial process control, and power amplification. NorLux Corp. specializes in the design and manufacture of custom lighting solutions utilizing light emitting diodes (LEDs). Uniroyal s business segments also include Coated Fabrics and Specialty Adhesives.
The Company s common stock and warrants trade on the Nasdaq/NMS under the symbols UTCI and UTCIW, respectively.
The research reported in this document was performed in connection with U.S. Air Force Research Laboratory Contract F33615-99-C-5317 and in connection with Contract/Cooperative Agreement number DAAD17-00-C-0111 with the U.S. Army Research Laboratory. The views and conclusions contained in the document are those of the authors and should not be interpreted as presenting the official policies or position, either expressed or implied, of the U.S. Air Force Research Laboratory, the U.S. Army Research Laboratory of the U.S. Government unless so designated by other authorized documents. Citation of manufacturer s or trade names does not constitute an official endorsement or approval of the use thereof. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation herein.
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