Intelligent Epitaxy Technology, Inc. Introduces Carbon Doped InP HBT Epiwafers for 40 Gb/s Optical Networks
November 27, 2001
Richardson, TX. Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries with its proprietary real time in-situ growth monitoring technology, today announced the introduction of carbon-doped InP heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE) systems.
"IntelliEPI has been working on 4-inch InP HBT epiwafers since the first half of 2000 using multi-wafer production MBE systems. We have been supplying carbon-doped InP HBT wafers to our strategic customers since March of this year." said Dr. Yung-Chung Kao, the President & CEO of IntelliEPI. "The device results on our carbon-doped InP SHBT wafers have achieved ft of 200 GHz and fmax of 200 GHz, and have excellent resistivity uniformity across wafer (less than 0.5%) and from wafer-to-wafer. We have also successfully achieved carbon-doping levels up to 1 x 10 20/cm3 in our on-going development efforts. This high level of carbon doping can only be achieved by MBE systems".
Sales & Marketing Director, Jim Fang, also pointed out "besides carbon-doped InP HBT wafers, we have been supplying Be-doped InP HBT wafers in large volume to our key customers. Our Be-doped InP SHBT wafers have consistently achieved ft of 150 GHz and fmax of 160 GHz according to our customers".
"By having the carbon-doped InP HBT epiwafers available to our customers, we can now offer our customers both carbon and beryllium doped InP HBT wafers for the next-generation of 40 Gb/sec (OC-768) optical networks and power amplifiers for 3G wireless handsets. We are working closely with several domestic and foreign customers on their OC-768 and other wireless communication applications" said Dr. Yung-Chung Kao.
About Intelligent Epitaxy Technology, Inc.
Intelligent Epitaxy Technology, Inc. (IntelliEPI) is an industry leader in supplying InP and GaAs epiwafers with its proprietary real time in-situ growth monitoring technology to customers in both electronics and optoelectronics industries. Its products allow customers to efficiently manufacture production volumes of high performance electronics and optoelectronics devices. IntelliEPI is incorporated in Texas with headquarters in Richardson, Texas.
Web: www.intelliepi.com.
Contact: Jim Fang, Sales & Marketing Director
Intelligent Epitaxy Technology, Inc.
Richardson, TX
Tel: +1 888-561-3535 Ext. 311
HQ Fax: +1 972-234-0069
Email: fang@intelliepi.com
Jim Fang, Sales & Marketing Director
Intelligent Epitaxy Technology, Inc.
Richardson, TX
Tel: +1 888-561-3535 Ext. 311
HQ Fax: +1 972-234-0069
Email: fang@intelliepi.com
E-mail: fang@intelliepi.com
Web site: http://www.intelliepi.com
