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Epistar ramps blue and green nitride LED production with new MOCVD system from Aixtron

Aachen/Taiwan. In order to ramp up Epistar s production of GaN-based LEDs, Epistar has ordered an AIX 2400G3HT system in 11x2" configuration. In addition to its known advantages, this system yields an extremely high throughput. At the same time, the highly efficient utilization of the precursors, such as ammonia and alkyls as well as hydrogen allows operation of the system at an extremely low cost of ownership. Particularly for green GaN-based LEDs, the AIXTRON Planetary Reactor is the choice for Epistar, providing a leading edge for high In-content GaInN technology.

The AIX 2400G3HT has a capacity of up to 11x2" or 5x3" wafers and is equipped with a fully automated wafer loading/unloading system. The two-flow horizontal Planetary Reactor is recognized as the most widely used multiwafer MOCVD reactor for compound semiconductor applications. The unique reactor concept allows laminar gas flow without turbulence for precise control of the material composition and achievement of ultra-sharp interfaces. Ultra-high uniformity along with high growth efficiency on multiple 2" or 3" wafers is achieved through wafer rotation with the patented Gas Foil Rotation.

Dr. Ming-Jiunn Jou, Vice-President, responsible for III-V Nitride development at Epistar comments: "The AIX 2400G3HT reactor with its increased capacity and proven efficiency is compulsory for achieving low cost production and it will maintain Epistar s technological leadership. The III-Nitride LED wafers produced at Epistar using the AIXTRON Planetary Reactor achieve the industrial standard brightness with superior uniformity and high efficiencies." Claus Ehrenbeck
Tel: +49 241 8909 444
Fax: +49 241 8909 445
E-mail: C.Ehrenbeck@aixtron.com
Web site: http://www.aixtron.com

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