Technical Insight
Kopin Announces C-Doped InP HBT Epiwafers (Materials and Equipment)
Kopin (Taunton, MA) is manufacturing C-doped InP HBT epiwafers up to 4-inch in diameter in its production MOCVD systems. "Our proprietary and patent-pending process overcomes previous difficulties to incorporate sufficient quantities of carbon into InP HBTs, especially by MOCVD," said John Fan, Kopin s president and CEO. "Although Be-doped InP HBTs have been grown by MBE, C-doped HBTs are preferable because carbon is a more stable dopant." "We have achieved active carbon doping levels exceeding 1 1019 /cm3, a critical threshold for many circuit applications, and are steadily increasing the doping level for even higher speed circuits," added Roger Welser, Kopin s director of transistor technology. "The transistor characteristics of large area InP HBTs grown and fabricated at Kopin are excellent, suggesting very high material quality is obtained by our MOCVD process."