+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
Technical Insight

Kopin Introduces InGaP/GaInAsN HBT Epiwafers (Markets, Materials and Equipment)

Kopin (Taunton, MA) is sampling InGaP/GaInAsN HBT epiwafers, designed to enhance the reliability, temperature stability and RF performance of HBT transistors based on existing GaAs manufacturing processes. The new process augments the company s recently announced C-doped InP HBT epiwafers. "We are delighted to announce our success in incorporating indium and nitrogen into the base layers of our HBTs," said John Fan, president and CEO. "We have achieved substantial reductions in turn-on voltage of more than 150 mV with these InGaP/GaInAsN structures, while retaining excellent device characteristics. This major technical advance should enable significant improvements in GaAs-based HBT power amplifiers for advanced wireless handsets by lowering the operating voltage, increasing the efficiency and reducing power consumption."
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: