Technical Insight
Cree unveils new 3 inch 4H-SiC wafers (Nirtide News)
Cree has introduced a new 3 inch diameter n-type 4H-SiC wafer to complement its existing 3 inch n-type 6H-SiC wafers. In addition, Cree has demonstrated a 3 inch semi-insulating 4H-SiC substrate, which it says will allow scaling of RF and microwave products for commercial production. The availability of 3 inch wafers more than doubles the available device area per wafer compared to existing 2 inch SiC wafers, and is expected to significantly reduce the cost of devices made from SiC. "The addition of n-type 4H to our 3 inch product family, and the demonstration of 3 inch semi-insulating wafer capability, results from Cree s commitment to converting world-class research into products that respond to the needs of the commercial market," commented Robert Glass, general manager of Cree s materials business.
