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Technical Insight

Japanese groups boost SiC MOSFETs (Nirtide News)

The electronics technology research laboratory of the Ministry of Economy, Trade and Industry has developed a silicon carbide MOSFET with one-tenth the internal resistance of previous devices. The lab lowered the internal resistance by reducing the defects in transistor gates and devising a structure that facilitates current flow deep within the substrate, eliminating resistance due to surface defects. Lowering internal resistance in turn reduces energy loss, a significant factor in the development of SiC MOSFETs for applications such as electric vehicles and industrial power generation equipment. The Electrotechnical Laboratory and the Research and Development Association for Future Electron Devices have jointly developed a silicon carbide MOSFET, which achieves a channel mobility of 140 cm2/Vs. The joint research group has devised a new oxide film formation technique and a unique buried channel structure to boost the flow of electrons. The group has also developed an ultra-high-temperature, ultra-speed thermal processor that incorporates a unique post-ion-implantation thermal processing system, and has succeeded in reducing the source drain s sheet resistance to 38 . The prototype SiC MOSFET will pave the way to significantly reducing power losses in SiC-based large power converters. The Power Electronics Research Center of the National Institute of Advanced Industrial Science and Technology has successfully fabricated an interface-controlled enhancement buried-channel 4H-SiC MOSFET that achieves a channel mobility of 140 cm2/Vs at a threshold voltage of 0.3 V. The MOSFET has a thermally grown gate oxide in 4H-SiC, which is prepared by dry oxidation with H2O annealing. The buried channel region was created by nitrogen ion implantation at room temperature followed by annealing at 1500C. The lab has found the optimum doping depth of the buried channel region at 0.2 m. SiC is expected to be used as a next-generation power electronics semiconductor material, which should achieve resistance levels less than 1/100 of those of conventional silicon devices.
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