Technical Insight
Blue emitter provides alternative to InGaN (research review)
The nitride semiconductor group at Nottingham University in the UK has recently demonstrated strong blue luminescence at room temperature from arsenic doped GaN films. The films, which may constitute a viable alternative to InGaN as the basis for light-emitting nitride devices, were found to produce a strong blue luminescence at 2.6 eV (462 nm). The films were grown on sapphire at 800C by plasma-assisted MBE, and the resulting intensity and wavelength of emission depended on the As2 flux. The authors, A J Winser et al., described their work on page 2506 of Applied Physics Letters 2000, 77.
