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Technical Insight

New Devices (New Devices)

WIRELESS PRODUCTS Mitsubishi shrinks MMIC PA packages Sunnyvale, CA. Mitsubishi Electric has rolled out two new MMIC PAs based on its GaAs HBT process. The company s new BA01202 chipset boasts increased performance, a 25% reduction in idle current and 35% reduction in overall size, and is designed for the 1.9 GHz CDMA band. This device is complemented by the BA01203, engineered for the 800 MHz CDMA band. The two amplifiers feature a single positive 3.2 V supply, 25 dB of gain and 50 ohm matching from a 6 6 mm module package. Sampling now as a combined 800/1900 MHz chipset, the company s BA01202 and BA01203 devices are currently in volume production for $6 per 10 000 units (see ). www.mitsubishichips.com RF Nitro offers InGaP/GaAs PAs Charlotte, NC. RF Nitro Communications has released a new series of broadband InGaP/GaAs RF and microwave MMIC amplifiers optimized for high frequency applications. These 50 ohm cascadable gain blocks are suited to driver and distributed amplification requirements of VSAT, point-to-point, point-to-multipoint, LMDS and optical networks requiring high frequency operation, high gain and good IP3 performance. These new devices are offered in chip, 4 lead ceramic micro-X and a new 5 lead micro-X ceramic package with automatic gain control. The NBB series (4 lead and chip) and NDA series (5 lead and chip) operate up to 17 GHz (see ). www.rfnitro.com MwT introduces GaAs amplifiers Fremont, CA. A new range of ultra-linear driver amplifiers covering the 800960, 18002000 and 21002500 MHz ranges has become available from Microwave Technologies (MwT). These devices feature output powers (P1) of +24 dBm with IP3 values of +42 dBm and 18 dB return loss for simple circuit integration. In addition, the company has introduced two fully-matched 4 W amplifiers for broadband wireless access applications using MMDS and ISM bands. Delivering 36 dBm of power at the 1 dB compression point and 13 dB of gain, these transistor PAs are manufactured using the company s GaAs MESFET technology. The MPS-242520-83 operates in the 2.42.5 GHz range and the MPS-252720-83 from 2.5 to 2.7 GHz. Both parts are fully matched to 50 ohms and use flange packages for thermal performance and reliability. The company also manufactures AlGaAs/InGaAs PHEMTs for power and gain applications at millimeter-wave frequencies. The H15 is a PHEMT with a 0.3 m gate length and 630 m gate width. The device demonstrates a P1dB of 0.5 W with gain greater than 7.5 dB across the 1826 GHz band in a balanced amplifier module. www.mwtinc.com NEC s SPDT switches hit the mark Santa Clara, CA. NEC s new UPG137GV and UPG138GV are L-Band single pole double throw (SPDT) GaAs-based MMIC switches developed for digital cellular, PCS and WLAN applications. These devices feature a wide bandwidth, low insertion loss and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the UPG138GV operates from 3 to 5 V. Both devices are housed in an 8 pin SSOP package and are available on tape-and-reel. For the L- and S-band, the company has also introduced a low insertion loss GaAs SPDT switch. Based on a GaAs FET process and designed for PCS, WLAN, WLL and Bluetooth applications, the UPG158TB operates from 300 MHz to 2.5 GHz and is housed in a 6 pin (2.0 1.25 0.9 mm) super mini-mold package. High linearity switching is offered, and a Pin (at 1 dB) of +26.5 dBm and Pin (0.1 dB) of +23.0 dBm, for a control voltage of 3 V. www.cel.com Toshiba launches 60W GaAs FET San Jose, CA. Toshiba has introduced a 60 W C-Band internally-matched GaAs HFET power amplifier for the 7.78.5 GHz range. The TIM7785-60SL targets gateway or earth station satellite communications systems (SATCOM), and long-haul point-to-point terrestrial communications. At 48 dBm, Toshiba s device is one of the highest output power devices available at this frequency range. Featuring a gain of 6 dB, the device is designed for the high linearity required for the modulation at communications data rates. In addition, the TIM7785-60SL features the same 2-16G1B hermetically sealed packaging used in the company s range of C-Band devices operating above 12 W. Toshiba says the HFET process is well suited to high-power microwave devices because its inherently higher carrier concentration enhances output power and gain. The HFET also benefits from a Schottky barrier that is higher than comparable GaAs MESFETs, achieving improved gate breakdown voltage for a reduced gate leakage current - a critical parameter for higher power operation. Samples will be available in July, with production in October (see ). www.chips.toshiba.com Microsemi unveils WCDMA PA Santa Ana, CA. Microsemi has unveiled a high efficiency linear PA targeting 3 V mobile hand-held devices. Manufactured using the company s new InGaP/GaAs HBT RFIC process, the MWS11-PH43-CS is designed for use as a final RF amplifier in WCDMA and CDMA2000 applications, spread spectrum systems and other linear applications in the 18002000 MHz band. Two 16 pin package versions exist for these PAs: a 3 3 mm2 chip scale package (CSP) with external input/output match, and an internally I/O matched module. Operating from a single 3 V supply, typical features of these devices include 27 dBm of linear output power, 28 dB of linear gain, 40% linear efficiency and an idle current of 70 mA (see ). www.microsemi.com Mimix single chip MMIC up-converter Houston, TX. Mimix Broadband has introduced a fully-integrated GaAs MMIC up-converter consisting of a single fundamental mixer followed by a single-stage amplifier. Using a 0.15 m gate length GaAs PHEMT technology (obtained from external sources), the XU1000 up-converter covers the 1727 GHz frequency band, and demonstrates a small signal gain of 0 dB with third order intercept point of +12 dBm across the designated band. The single chip design lowers power consumption and operates at +3.0 V DC supply. Used in conjunction with the company s XP1000 PA and XB1000 gain block amplifier, the XU1000 forms a complete millimeter-wave transmitter. It also has smaller size and lower cost designs and is suitable for millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications. "The integration of a gain stage with the mixer reduces the subsequent gain needed to realize the transmit power level required in a radio, reducing overall chip count in many cases," said CTO Jim Harvey. "In conjunction with the other integrated devices available for the 17 to 27 GHz bands, this device allows users to manufacture radio terminals with lower overall active device count, compared to other designs." (see ) www.mimixbroadband.com FIBER OPTIC PRODUCTS Corning offer 980 nm submarine pump laser Corning, NY. Corning has introduced a 980 nm pump laser designed for submarine use in long-haul optical networks. Manufactured at Corning OTI (formerly Pirelli Componenti Ottici) in Italy, the new 980 nm pump laser provides 120 mW of output power and a reliability of
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