Technical Insight
Toshiba launches 60W GaAs FET (New Devices)
San Jose, CA. Toshiba has introduced a 60 W C-Band internally-matched GaAs HFET power amplifier for the 7.78.5 GHz range. The TIM7785-60SL targets gateway or earth station satellite communications systems (SATCOM), and long-haul point-to-point terrestrial communications. At 48 dBm, Toshiba s device is one of the highest output power devices available at this frequency range. Featuring a gain of 6 dB, the device is designed for the high linearity required for the modulation at communications data rates. In addition, the TIM7785-60SL features the same 2-16G1B hermetically sealed packaging used in the company s range of C-Band devices operating above 12 W. Toshiba says the HFET process is well suited to high-power microwave devices because its inherently higher carrier concentration enhances output power and gain. The HFET also benefits from a Schottky barrier that is higher than comparable GaAs MESFETs, achieving improved gate breakdown voltage for a reduced gate leakage current - a critical parameter for higher power operation. Samples will be available in July, with production in October (see ). www.chips.toshiba.com
