Technical Insight
Air Force funds Sterling's SiC research (Nitride News)
Sterling Semiconductor has been awarded $1 million by the US Air Force to continue its research into semi-insulating SiC substrates. The 28 month contract is a Phase II continuation of a SBIR contract, and reflects Sterling s initial success with substrates prepared in the R&D stages during Phase I. The Air Force provides a 3:1 match of the company s internal R&D funding. Semi-insulating substrates are highly resistive, a property that is essential to devices used in wireless applications. SiC also offers superior properties to those of GaAs semi-insulating substrates, which are the current platform for a variety of wireless devices found in cell phones and other high-volume applications. The material provides excellent heat dissipation during device operation, and offers a high electric breakdown field (56 times higher than GaAs or Si) - a distinct advantage for high voltage RF power devices. "Semi-insulating SiC substrates are needed for a wide range of commercial and military communication devices to provide superior performance compared to conventional silicon and GaAs substrates," said Robert Soran, president and COO of parent company Uniroyal Technology. "SiC substrates can be used as a platform for both SiC and GaN epitaxial growth, depending on device requirements."
