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Technical Insight

Cree files new patent suit against Nichia (Nitride News)

In the latest round of patent litigation related to nitride-based devices, Cree is seeking the enforcement of US patent 5 686 738. This patent, entitled Highly insulating gallium nitride thin films , was issued to Boston University in 1997 and licensed to Cree. Boston University is a co-plaintiff in the action. In its complaint, Cree has alleged that Nichia is infringing the US patent "by selling and offering for sale in the US certain semiconductor devices made from GaN thin films". The patent describes a method for the growth of near intrinsic GaN films and also n- or p-type films using electron cyclotron resonance (ECR) microwave plasma-assisted MBE. However, the claims of the patent describe devices comprising certain layer configurations, including a non-crystalline GaN buffer and subsequent crystalline-doped GaN layers. The claims detail deposition temperatures and layer thicknesses, but do not exclude alternative growth techniques to the MBE method described. Both Cree and Nichia use MOVPE to grow their devices. In another recent lawsuit between these two companies, the Tokyo District Court dismissed an infringement lawsuit filed against Cree by Nichia (see Compound Semiconductor June 2001, p10).
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