Technical Insight
Epitaxy equipment news and sales (Materials and Equipment)
RF Micro Devices has qualified Applied Epi s GEN2000 MBE system for production of GaAs HBTs. The GEN2000 is designed to accommodate 4 4 inch and 7 6 inch wafers. Aixtron has sold its 100th AIX 2600G3 MOCVD reactor with cassette-to-cassette wafer handler. The reactor will be used by Agilent Technologies, UK, for the growth of InP-based laser structures. Virginia Tech has ordered an Aixtron AIX 200/4 reactor to grow GaN heterostructures used in optoelectronic devices. The Institute of Electronic Materials Technology in Warsaw, Poland, has ordered an additional AIX 200/4 RF-S system from Aixtron, to be used in the growth of GaN-based lasers and LEDs. The institute, whose first AIX 200 reactor is used to fabricate GaAs and InP devices, plans to purchase a further AIX 200/4 system for similar InP structures. Showa Denko has added to its existing capacity with the purchase of an Aixtron AIX 2600G3 (which accommodates 8 4 inch or 5 6 inch configurations). The system is intended for the fabrication of wireless communications structures.
