Technical Insight
JMAR accelerates XRL prototype development (Materials and Equipment)
JMAR Technologies (San Diego, CA) has received almost $7.8 million from DARPA, the US defense funding agency, to construct an engineering prototype for an X-ray lithography (XRL) system. The company, which received $9 million just three months ago from the same agency, is accelerating development of its XRL system for high-speed circuits used in telecommunications applications. JMAR believes XRL will be well suited to producing GaAs ICs with critical device dimensions ranging from 130 to 70 nm. JMAR has steadily increased the power output of its large-field XRL source, which is used to collimate 1 nm X-rays onto a mask/wafer target. The company is now targeting an output power of 45 W for subsequent integration into a photolithographic stepper produced by SAL (Burlington, VT). SAL acquisition goes through In related news, JMAR has completed the purchase of SAL (see Compound Semiconductor May 2001, p25). The business will now be known as J-SAL.
