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Technical Insight

Sterling steps up SiC epitaxy and device production (Nitride News)

Sterling Semiconductor, a subsidiary of Uniroyal Technology Corporation (UTC), is expanding its SiC epitaxial and device production through access to Uniroyal Optoelectronics manufacturing facility in Tampa, FL. Sterling manufactures 4H and 6H SiC substrates and epitaxial thin films on SiC substrates, and is also developing semi-insulating SiC substrates and devices for wireless communications, industrial process control and power amplification. The link-up with the Tampa facility is intended to accelerate Sterling s epitaxy and device product development significantly. Sterling has also recently extended leases
for its facilities in Danbury, CT and Sterling, VA, consistent with the expansion of its SiC wafer business and its development of semi-insulating substrates. The expansion follows the recent buy-out by UTC of Emcore s minority interest in the LED manufacturing subsidiary, Uniroyal Optoelectronics (see Compound Semiconductor September 2001, p4). This gives UTC free reign to direct the operations of Uniroyal Optoelectronics and Sterling at the Tampa facility. Sterling says it intends to capitalize on existing infrastructure and technological synergies at the Florida plant. The facility produces high-brightness LEDs and is currently undergoing an expansion program, which includes the installation of several new reactors. "The focus for Sterling continues to be rapid capacity expansion for SiC wafer production, as well as epitaxial and device product development," said Sterling s president, James LeMunyon. "Building our epitaxy and device facility at Uniroyal s Tampa plant provides Sterling with the opportunity to move quickly into these markets, whilst eliminating considerable redundant spend-ing for fabrication, characterization and testing equipment, which is already in place in Tampa." He added that the design of the facility allows Sterling s SiC epitaxy and device facility to operate independently from the operations of Uniroyal Optoelectronics. "We expect the expansion to accelerate our entry into the commercial epitaxial market by approximately one year, while stepping up Sterling s SiC device product development by approximately two years," added Robert Soran, president and chief operating officer of UTC. "The autonomy achieved through the purchase of Emcore s minority interest in Uniroyal Optoelectronics has made these opportunities possible for Sterling." Sterling has also received its first MOCVD reactor, which is currently being installed for the production of SiC epitaxial wafers to support product sales and device development at the Tampa site. The company says this reactor will benefit programs such as the recently announced R&D contract with General Electric Corporate Research & Development, which was set up recently to develop and evaluate Schottky diodes using the company s SiC wafers and epitaxy (see Compound Semiconductor May 2001, p8).
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