Vitesse wins DARPA funds for InP development
The initial 18-month contract contains option phases, which, if implemented, would bring the total value of the contract to more than $15 million.
The contract will allow Vitesse to further enhance the capabilities of its VIP-2 process, which was selected for its ability to enhance speed, power, performance, circuit reliability and production-worthy manufacturing practices required for the DARPA specification.
Indium phosphide technology allows direct digital synthesis of high-frequency signals, thereby simplifying the system design and reducing the number of discrete components required in advanced satellite, aircraft and terrestrial communication systems.
Vitesse will collaborate with BAE Systems on the design of communications circuits; initially, these are for direct digital frequency synthesis (DDFS) for electronic warfare and radar applications. UIUC will focus on research for the next-generation transistor structures meant to further extend circuit performance and applications.
A factor of two improvements in critical performance parameters has already been attained in early VIP-2 experiments at 0.45 microns. Further scaling is planned, by incorporating UIUC s findings, with the ultimate goal of shrinking device geometry to 0.25 microns. This will result in static flip-flop toggle frequencies of 150 GHz.
Frank Stroili, BAE Systems program manager for the Information and Electronic Warfare Systems (IEWS) unit, said, "Military systems and our products are following a trend toward smaller, more highly integrated, and flexible solutions. To provide effective capabilities for these systems, a revolutionary jump is needed to increase speed and bandwidth, level of integration, and the efficiency of the payload electronics. The technology developed on this program plays a major role in achieving those goals."
Vitesse s VIP-2 process
The VIP-2 process is similar to the Vitesse VIP-1 process, which is currently in production at the company s fab in Camarillo, CA. Both processes use four-inch diameter semi-insulating substrates and are designed for high performance and high yield.
The VIP-2 process utilizes a double HBT structure and has ft and fmax values of 300 GHz, which is twice the speed of current VIP-1 transistors.
The VIP-2 process has four layers of metal interconnect and includes resistors and capacitors. It provides circuit designers the benefits of both high-speed and high-voltage operation suitable for digital, analog, and RF circuits at 10 GHz and higher.
"Vitesse, BAE Systems and UIUC embrace the opportunity to achieve the requirements DARPA has outlined and lead the charge for design improvements in their existing and future systems by using this emerging technology," said Ray Milano, VP of physical media devices at Vitesse. "Being awarded the DARPA contract is a strong indicator to the industry regarding the capabilities of indium phosphide for building advanced communications ICs."
