Cree buys ABB's silicon carbide IP portfolio
The patents cover epitaxial growth and device and circuit-level technology which ABB was developing at its facility in Sweden. The portfolio includes 44 US patents and patent applications together with corresponding international patents and applications. In addition, the agreement calls for the transfer of certain know-how related to the subject technology.
"We are extremely pleased to acquire this intellectual property," said John Palmour, Cree s executive VP of Advanced Devices. "These patents represent a very significant investment in silicon carbide research, all of which has been directed toward the development of SiC power devices. We are very familiar with ABB s considerable efforts in this area, and we look forward to continuing to advance this technology. We believe that the addition of this subject technology and know-how will further accelerate the development of new SiC power products, as well as further enhance our intellectual property position in this area."
