Bandgap develops micropipe blocking technology
The process has been applied to both semi-insulating and low resistivity 6H-SiC resulting in a consistent micropipe density of less than 50 /cm2. With the ability to achieve micropipe densities as low as 5 /cm2, application of this process to 4H-SiC is currently underway.
Bandgap, based in Columbia, SC, currently produces 2-inch epi-ready SiC wafers for the compound semiconductor market.
Using the new process, the company expects to begin initial production of 4H-SiC for high-power and high-frequency applications early in the first quarter of 2004. It will also transition to the production of larger diameter wafers.
The company says that this process development will significantly improve the quality of commercial SiC wafers while reducing the production cost of substrate material for the compound semiconductor industry.
“We are very exited that we were able to take this process from the R&D stage to commercial application," said Yuri Khlebnikov, Bandgap’s president. "We believe that this will open the door to unparalleled consistency in the production of low-micropipe-density silicon carbide."
Founded in 2000, Bandgap Technologies began research and development of SiC with funding from the Missile Defense Agency under contract with the Office of Naval Research.
The company has now moved into commercial production and targets its product line at niche SiC applications with competitive pricing for standard SiC products.