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Research Review: recently published results

Sub-300 nm electroluminescence from devices grown on an AlN base layer on sapphire; SiGe-free strained silicon-on-insulator wafers; and high-performance, wafer-bonded 1310 nm VCSELs.
UCSB achieves sub-300 nm emission using AlN base layers Amy Hanlon and colleagues at the University of California, Santa Barbara (UCSB) have reported the first sub-300 nm electroluminescence from devices grown on an AlN base layer on a sapphire substrate (Jpn. J. Appl. Phys. 42 (Pt.2 (6B)) L628).

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AmberWave demonstrates SiGe-free SSOI Researchers at AmberWave Systems in Salem, NH, have demonstrated a SiGe-free SSOI substrate technology, as well as describing a method of verifying strain levels in SiGe-free SSOI (Appl. Phys. Lett. 82(24) 4256). New record set for bonded VCSELs Wafer bonding can be used to produce long-wavelength VCSELs by integrating InP active regions with GaAs-based DBRs. In a late-news paper at June’s CLEO meeting in Baltimore, MD, John Bowers and colleagues from UCSB revealed details of a VCSEL structure, which has taken bonded VCSELs to new levels of performance.

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