Crystal IS doubles AlN substrate diameter
This development has come through a DARPA-funded effort for improving substrates for next-generation RF power electronics and builds upon previous demonstrations and the recent commercialization of 12 mm diameter AlN single crystal boules.
AlN is considered a low-defect alternative to semi-insulating SiC and insulating quasi-bulk GaN for next-generation high-power RF electronics due to its high thermal conductivity, low dislocation density, and close thermal expansion match to GaN and AlGaN alloys. Native AlN substrates also enable AlGaN device structures in any orientation (a-plane, m-plane, and c-plane). AlN also offers a close lattice match to GaN and AlGaN, eliminating the need for complex strain-management buffer layers which are required when growing Gan and AlGaN onto Si, SiC and sapphire substrates.
“Participation in DARPA’s Wide Bandgap Semiconductor Technology Initiative has given us the critical push and focus to make this size achievement,” said Jon Whitlock, CTO of Cystal IS. “Although AlN crystal growth is challenging, demonstrations like this show we are rapidly improving our understanding of what is required to increase substrate diameter."
“The new results provide additional confidence that we will be able to offer our customers 25 mm and possibly larger substrates in 2004, for which additional production capacity will be installed this Fall with plans to be operational in early in 2004,” said Keith Evans, COO and VP of business development.
