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GaN HEMT features high power density

TriQuint and Lockheed Martin say that their new process increases GaN HEMT power density 50% beyond conventional devices.

A GaN HEMT developed by TriQuint Semiconductor and Lockheed Martin has record power density, power-added efficiency and RF lifetime, say the companies.

The high-performance transistor, which was fabricated using an ‘advanced gate process’, features nearly 12W/mm CW power and more than 50% power-added efficiency at 10GHz.

The improved performance and reliability should enable significant size and weight reductions in radar-based defense applications.

Gailon Brehm, TriQuint’s military business unit manager, said: “Gallium nitride has capabilities from L-band up to W-band, making it a very exciting technology for the future of millimeter and microwave applications.”

The device’s increased power density could simplify radar power distribution in large systems and can greatly reduce operational electrical current. This may lead to significant weight and size reductions in shipboard systems and land-based applications.

TriQuint says that its proprietary process increases GaN HEMT power density 50 percent beyond that of more conventional E-beam T-gate devices. In addition, power added efficiency is 10-15 points higher, allowing the devices to function with reduced power dissipation and lower operating temperature.

Improved RF lifetime has also been demonstrated with the advanced high voltage gate structure, thanks to reduced gate leakage and a lower electric field in the drain region.

Mahesh Kumar, director of Research and Technology for Lockheed Martin Maritime Systems and Sensors, said: “Gallium nitride will redefine what is possible by providing our customers the reliable, compact, high-powered technology they need to field solid-state phased array radar, space systems and missiles to protect against emerging threats.”

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