Spire grant funds low-noise APD development
The program, valued at $100,000, has the goal of developing lower noise APDs at 1.55 microns. These will enable higher speed fiber-optic communication systems with lower bit-error rates.
Spire plans to develop APDs based on AlGaSb, a material which enhances hole ionization and results in a lower noise device. The material will be grown by MOCVD by Bandwidth Semiconductor, Spire s wholly-owned epiwafer manufacturing subsidiary.
Spire re-acquired Bandwidth in May 2003, after selling the business to Stratos Lightwave in 1999 (see Spire buys back Bandwidth Semiconductor).
Roger Little, Chairman and CEO of Spire Corporation said, “With the telecom industry experiencing some recovery, we are delighted to receive this award. Low-noise APDs are products that fit well with Bandwidth Semiconductor s capabilities and commercial directions.”
