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Crystal IS wins two SBIR awards from DARPA

AlN substrate manufacturer Crystal IS has received two SBIR awards to investigate epi-ready substrates and the benefits of quantum dot technology.
Crystal IS, a manufacturer of single-crystal aluminum nitride (AlN) substrates based in Watervliet, NY, has announced two new phase I awards under DARPA’s Small Business Innovative Research (SBIR) program.

Both programs involve the University of Albany as a subcontractor. The university will provide access to its III-nitride epitaxial growth effort under the direction of assistant professor Fatemah Shahedipour.

One of the new programs is associated with efforts to develop “epi-ready” substrate surfaces, which if successful could speed the development of low-cost, high-performance devices across a wide range of device types and applications.

The other SBIR program is seeking to combine the benefits of native AlN substrates with recently developed quantum dot technology. Crystal IS says that this “high-risk, high-payoff” technical approach has the potential to enable the first high-efficiency deep-green LEDs, which may be important for a variety of applications including solid-state white lighting.

“We are very appreciative for the continuing support we have received from DARPA and other DoD agencies,” said Leo Schowalter, Crystal IS president and CEO. “Such support has been critical in helping us drive towards the commercialization of native single crystal AlN substrate technology which has strong potential to positively impact many high value electronic and optoelectronic device applications.”

“Professor Shahedipour and the University of Albany are establishing an impressive effort in III-nitride materials development and our respective capabilities are highly complimentary,” said Keith Evans, Crystal IS VP of business development. “We are very hopeful that our relationship will continue to grow as more opportunities unfold.”

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