News in brief: LED manufacture and SiC wafers
Giga Epitaxy to launch LED chips line
Giga Epitaxy Technology, a Taiwan-based manufacturer of GaAs-based epiwafers, is scheduled to launch an AlGaAs LED chip line this July, according to Global Sources.
The new line, which has an expected capacity of 20,000 square inches per month, will produce chips for red LEDs using liquid phase epitaxy.
The production line will make both single-heterostructure (SH) and double-heterostructure (DH) three-element LED chips. The SH devices feature a brightness of less than 15 mcd and the DH units more than 15 mcd brightness.
China Fangda develops GaN-based LED chips
China Fangda Group has developed high-power GaN-based LEDs with a brightness of up to 1.5 cd, and claims operating lifetimes of over 80,000 h, according to another report from Global Sources.
The company has obtained an independent intellectual property right for the GaN chip, and claims its LEDs will promote development of semiconductor lighting in mainland China over the next few years.
China Fangda says it has an annual capacity of 35,000 GaN epitaxial wafers.
Intrinsic launches SiC wafers
Intrinsic Semiconductor, a SiC and GaN specialist, is now offering a variety of SiC wafers for use in microelectronic devices.
“We are committed to becoming the cost and volume leader servicing the wide bandgap device market,” said Intrinsic’s president and CEO, Cengiz Balkas.
Intrinsic Semiconductor, based in Sterling, VA, is now distributing its products to the Japanese market through New Metals and Chemicals Corporation.
Minoru Mito, general manager of New Metals, announced: “ [New Metals] looks forward to supporting the wide bandgap industries in Japan as Intrinsic develop novel SiC and GaN devices using Intrinsic’s SiC substrates.”
