In brief: Epiworks, Sharp, Sirenza, Xindium
Production level of wireless components have been boosted by the implementation of the first 7 x 6 inch MOCVD reactor making InGaP HBTs. US epiwafer supplier Epiworks qualified Aixtron?s 2600G3 Planetary MOCVD reactor, previously used in a 5 x 6 inch configuration, earlier this year.
The new configuration could boost production of power amplifier chips by up to 40 percent, said Epiworks.
?To date, our 7 x 6 inch configuration has mainly been used for PHEMT production. We are excited that the reactor design is also proven to support Epiworks? stringent HBT production requirements,? said Bernd Schulte, Aixtron?s COO.
Sharp releases its first SiGe-based ICJapan-based consumer electronics manufacturer Sharp has introduced its first IC based on a SiGe process. The chip forms part of a front-end module that targets the high-speed and low-power requirements for an emerging European mobile TV standard.
Sharp will produce the components at its IC fab in Osaka, Japan, which has recently been renovated to handle the SiGe process.
Sirenza wins patent for broadband technologySirenza Microdevices, a US-based RF component manufacturer, has been awarded US patent 6,806,778. The broadband technology patent, entitled ?Darlington Cascode?, describes a means for improving the robustness and performance of wide-band amplifiers.
?This patent applies directly to our broad product offering including our lower frequency SiGe and GaInP gain blocks. This approach may allow us to stretch our performance to the upper microwave frequency regime without relying on more expensive technology solutions,? explained Sirenza?s CEO, Joe Johnson.
Xindium hires technical teamXindium, a US-based developer of RF PAs that recently lost its entire research team (see related story)(see related story) has recruited seven engineers to its ranks, including industry veteran Keith Manssen.
Manseen, appointed as VP of engineering, previously worked at Motorola where he helped produce components and systems, from early ?brick? phones to high-end GSM1900 cell phones.
In his new role he heads a team developing InP-based RF power amplifiers for cell phones. These components are said to offer superior thermal management over today?s GaAs designs, enabling cell phones operating with faster data rates, particularly in the uplink.
