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News Article

Cree's GaN amplifier shows record efficiency

With an output of 10 W in the 2 GHz region, Cree's GaN amplifier operates with 84 percent power-added efficiency.
By Michael Hatcher in New Orleans
US chipmaker Cree says that it has developed a GaN-based RF amplifier with record power-added efficiency (PAE).

Cree s Jim Milligan told CS Mantech delegates that the device, which operates over 1.9-2.1 GHz, had a power output of 10 W and a PAE of 84 percent.

The company has also made highly-efficient chips operating at 2.7-2.9 GHz and at 3.3-3.5 GHz.

Milligan was also keen to stress Cree s progress with SiC RF chips. "SiC is ready now," he emphasized.

Having recently completed a 2000-MMIC demonstration, Milligan added that the technology had "taken off" in the last 6-9 months.

Although mostly used for the US miltary, Milligan said that SiC devices could soon drop in cost if ordered in high volumes.

Currently costing 3 dollars per W in quantities of 100,000, this price should fall when Cree moves to 4-inch substrate production, which is scheduled for 2007.

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