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Vitesse sees resurgence in optical communications

Vitesse Semiconductor releases a new line of InP-based photodiodes in response to what it describes as a "resurgent" optical communications market.

Growth in optical networking protocols such as Ethernet, multi-rate Fibre Channel and fiber-to-the-home (FTTH) has led Vitesse Semiconductor to release two new InP-based photodiode products.

According to the Camarillo, CA, chipmaker, the optical networking sector is "resurgent" as consumers are demanding more bandwidth to power fiber-delivered residential services such as high-definition television.

One of the new Vitesse products, the VSC7750, is an InGaAs/InP PIN photodiode designed for 1310-1550 nm wavelength detection. The second, denoted VSC7780, is a GaAs PIN that detects 850 nm transmissions. Each photodiode operates at up to 4 Gb/s.

Both detector types are manufactured on Vitesse's 4-inch InP wafer line, which the company claims is now providing high device yields as well as economies of scale.

That appears to be reflected in the price of the devices "“ which is less than $1 if they are ordered in volume.

Production of the InP detectors is set to ramp up in the final quarter of this year, while Vitesse is also supplying an SiGe-based driver IC for a new 10 Gb/s optical module reference design.

The driver IC features alongside a 1310 nm uncooled electro-absorption modulated laser (EML) in a module put together by Apogee Photonics, the new company recently formed by the merger of T-Networks and ASIP (see related story).

According to Apogee, the module works over a much wider temperature range than competing products that rely on direct laser modulation. The result is an improvement in module reliability when operating in a high-temperature environment.

Vitesse s confidence in the optical networking business comes as component manufacturers such as Bookham, Avanex and JDS Uniphase all report a strong upturn in business. However, most of these suppliers are still struggling to reduce the overheads inherent to III-V semiconductor manufacturing and posting net losses.

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